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Hot
Paper in Electrical & Electronics Engineering
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"High power CW operation of InGaAsN
lasers at 1.3 mu m," by A.Y. Egorov and 5 others, Electronics
Letters, 35(19):1643-4, 16 September 1999.
[Authors' affiliations: Ioffe Physico-Technical
Institute, St. Petersburg, Russia; Infineon Technology, Munich, Germany]
Abstract: "Room temperature,
continuous-wave operation at 1.3 mu m is report for InGaAsN triple quantum
well lasers. The layers were grown by MBE using an RF-coupled plasma source
for nitrogen. Large broad area lasers exhibit very low threshold current
density down to 680A/cm(2) and a slope efficiency of 0.59W/A (output per two
facets). Maximum output powers of 2.4 and 4W are reached at 10 degrees C under
CW and pulsed operation, respectively. These values are a significant
improvement over those previously published for lasers in the InGaAsN material
system."
This 1999 report from Electronics Letters
was cited 6 times in current journal articles indexed in the ISI
database during July-August 2001. No other paper in the ISI category of
Electrical and Electronics Engineering received as many citations during that
two-month period. Prior to the most recent bimonthly count, citations to the
paper have accrued as follows:
May-June 2001: 1 citation
March-April 2001: 4
January-February 2001: 2
November-December 2000: 4
September-October 2000: 6
July-August 2000: 7
May-June 2000: 1
March-April 2000: 1
January-February 2000: 1
Total citations to date: 33
SOURCE: Hot
Papers Database (Available from the ISI
Research Services Group in a CD-ROM version containing data on
hundreds of highly cited papers published during the last two years.
User interface permits searching by author, organization, journal,
field, and more. Total citations, as well as citations accrued during
successive bimonthly periods, can be assessed and graphed. Database is
combined with subscription to the ISI newsletter Science
Watch®; updated discs containing the
most recent bimonthly data are mailed with each new issue, six times a
year.)
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